Nexperia
PMPB47XP
30 V, single P-channel Trench MOSFET
017aaa542
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-30
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.47 -0.68 -0.9
IDSS
drain leakage current
gate leakage current
VDS = -30 V; VGS = 0 V; Tj = 25 °C
-
-
-
-
-1
µA
nA
IGSS
VGS = -12 V; VDS = 0 V; Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
5 December 2012
-100
©
PMPB47XP
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 / 14
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