Nexperia
PMPB47XP
30 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
4
5
6
7
8
D
D
G
S
D
D
D
S
drain
drain
gate
1
6
5
4
7
2
3
Transparent top view
G
8
S
source
drain
drain
drain
source
017aaa257
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMPB47XP
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB47XP
1W
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-30
12
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
V
A
A
A
A
W
VGS
-12
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
-5
-4
VGS = -4.5 V; Tamb = 100 °C
-2.5
-16
1.7
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
-
©
PMPB47XP
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2012
2 / 14
NEXPERIA [ Nexperia ]
