Nexperia
PMPB47XP
30 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
-
Max
3.5
Unit
W
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
[1]
-
12.5
150
150
150
W
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
-1.9
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
©
PMPB47XP
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Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2012
3 / 14
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