Nexperia
PMPB47XP
30 V, single P-channel Trench MOSFET
017aaa885
2
-10
Limit R
= V /I
DS
DSon
D
I
D
(A)
t
t
= 10 µs
p
p
-10
= 100 µs
= 1 ms
t
p
p
-1
-1
t
= 10 ms
DC; T = 25 °C
sp
t
= 100 ms
p
-10
DC; T
= 25 °C;
amb
2
drain mounting pad 6 cm
-2
-10
-2
-1
2
-10
-10
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
235
67
Max
270
74
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
33
36
Rth(j-sp)
thermal resistance
from junction to solder
point
5
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
©
PMPB47XP
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2012
4 / 14
NEXPERIA [ Nexperia ]
