Nexperia
PMPB47XP
30 V, single P-channel Trench MOSFET
017aaa888
017aaa889
0.20
0.20
-1.5 V
-1.7 V
-1.9 V
R
DSon
(Ω)
R
DSon
(Ω)
-1.6 V
-1.8 V
-2 V
0.16
0.12
0.08
0.04
0
0.15
0.10
0.05
0
T = 150 °C
j
-2.5 V
V
= -4.5 V
GS
T = 25 °C
j
0
-4
-8
-12
0
-1
-2
-3
-4
-5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = -3 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
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017aaa891
-14
1.6
I
D
a
(A)
-12
1.4
1.2
1.0
0.8
0.6
-10
-8
-6
-4
-2
0
T = 150 °C
j
T = 25 °C
j
0
-0.5
-1.0
-1.5
-2.0
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
©
PMPB47XP
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2012
7 / 14
NEXPERIA [ Nexperia ]
