PBSS8110X
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
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4
10
1200
BEsat
V
(mV)
V
CEsat
(mV)
1000
3
2
(1)
10
800
600
400
200
(2)
(3)
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 50; Tamb = 25 °C
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Base-emitter saturation voltage as a function
of collector current; typical values
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3
1200
10
V
BEsat
R
CEsat
(mV)
(Ω)
2
1000
10
800
600
400
10
1
(1)
(2)
(3)
−1
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20; Tamb = 25 °C
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS8110X_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 December 2009
8 of 15
NEXPERIA [ Nexperia ]
