PBSS8110X
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
227
89
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
junction to ambient
63
Rth(j-sp)
thermal resistance from
junction to solder point
16
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa409
3
10
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS8110X_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 December 2009
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