PBSS8110X
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
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3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
1
1
−1
10
−1
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20; Tamb = 25 °C
IC/IB = 50; Tamb = 25 °C
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 14. Collector-emitter saturation resistance as a
function of collector current; typical values
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2
I
(mA) = 35
I
C
B
(A)
31.5
28
24.5
1.6
21
17.5
14
1.2
0.8
0.4
0
10.5
7
3.5
0
1
2
3
4
5
V
CE
(V)
Tamb = 25 °C
Fig 15. Collector current as a function of collector-emitter voltage; typical values
PBSS8110X_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 December 2009
9 of 15
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