PBSS8110X
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
006aaa411
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; mounting pad for collector 6cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa410
2
10
duty cycle =
1
Z
th(j-a)
0.75
0.5
(K/W)
0.33
0.2
10
0.1
0.05
0.02
0.01
0
1
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS8110X_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 December 2009
5 of 15
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