PBSS8110X
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off VCB = 80 V; IE = 0 A
-
-
-
-
current
VCB = 80 V; IE = 0 A;
μA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = 80 V; VBE = 0 V
-
-
-
-
100
100
nA
nA
emitter-base cut-off
current
VEB = 4 V; IC = 0 A
DC current gain
VCE = 10 V; IC = 1 mA
VCE = 10 V; IC = 250 mA
VCE = 10 V; IC = 500 mA
VCE = 10 V; IC = 1 A
150
-
-
150
-
500
-
[1]
[1]
100
-
80
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA
-
40
120
200
200
mV
mV
mV
mΩ
-
-
[1]
[1]
-
-
RCEsat
VBEsat
VBEon
collector-emitter
saturation resistance
-
165
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
VCE = 10 V; IC = 1 A
-
-
-
-
1.05
0.9
V
V
base-emitter turn-on
voltage
td
tr
delay time
VCC = 10 V; IC = 0.5 A;
IBon = 0.025 A; IBoff = −0.025 A
-
25
-
-
-
-
-
-
-
ns
rise time
-
220
245
365
185
550
-
ns
ton
ts
turn-on time
storage time
fall time
-
ns
-
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
ns
VCE = 10 V; IC = 50 mA;
f = 100 MHz
100
MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
-
7.5
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS8110X_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 December 2009
6 of 15
NEXPERIA [ Nexperia ]
