Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
aaa-020830
1
P
tot
(W)
0.8
0.6
0.4
0.2
0
(4)
(3)
(2)
(1)
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, single-sided copper, standard footprint
(2) FR4 PCB, 4-layer copper, standard footprint
(3) FR4 PCB, single-sided copper, 1 cm2
(4) FR4 PCB, 4-layer copper, 1 cm2
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
[4]
-
-
-
-
-
-
-
-
338
219
236
179
K/W
K/W
K/W
K/W
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
[4]
-
-
-
-
-
-
-
-
246
161
172
131
K/W
K/W
K/W
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), 4-layer copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), 4-layer copper, tin-plated, mounting pad for
collector 1 cm2.
©
PBSS4260PANPS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
4 / 21
NEXPERIA [ Nexperia ]
