Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
Symbol
TR1 (NPN)
RCEsat
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter
IC = 1 A; IB = 50 mA; pulsed;
-
-
200
mΩ
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
TR2 (PNP)
RCEsat
collector-emitter
IC = -1 A; IB = -50 mA; pulsed;
-
-
310
mΩ
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
C1 B2
1
2
3
4
5
6
7
8
E1
B1
C2
E2
B2
C1
C1
C2
emitter TR1
base TR1
E2
6
5
4
3
TR2
7
8
collector TR2
emitter TR2
base TR2
TR1
E1
B1 C2
sym139
1
2
Transparent top view
collector TR1
collector TR1
collector TR2
DFN2020D-6 (SOT1118D)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4260PANPS
DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D
small outline package; no leads; 6 terminals; body 2 x 2
x 0.65 mm
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4260PANPS
3D
©
PBSS4260PANPS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
2 / 21
NEXPERIA [ Nexperia ]
