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PBSS4260PANPS 参数 Datasheet PDF下载

PBSS4260PANPS图片预览
型号: PBSS4260PANPS
PDF下载: 下载PDF文件 查看货源
内容描述: [60 V, 2 A NPN/PNP low VCEsat (BISS) double transistorProduction]
分类和应用:
文件页数/大小: 21 页 / 788 K
品牌: NEXPERIA [ Nexperia ]
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Nexperia  
PBSS4260PANPS  
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor  
12. Package outline  
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads;  
6 terminals; body 2 x 2 x 0.65 mm  
SOT1118D  
b
v
A B  
p
(6x)  
D
A
B
A
E
A
1
pin 1  
index area  
detail X  
solderable lead end  
protrusion maximum 0.035 mm (6x)  
D
1
C
(2x)  
pin 1  
index area  
e
e
1
y
C
1
y
1
3
1
L
(6x)  
p
cut-off end of  
non-fuctional  
bonding wire  
(8x)  
E
1
(2x)  
4
6
X
e
e
0
1
2 mm  
scale  
Dimensions (mm are the original dimensions)  
Unit  
max 0.65 0.04 0.35 2.1 0.77 2.1  
A
A
b
D
D
1
E
E
e
e
1
L
p
v
y
y
1
1
p
1
1.0  
0.9 0.65 0.49 0.25 0.1 0.05 0.05  
0.8 0.44 0.20  
0.54 0.30  
nom  
mm  
0.62  
0.30 2.0 0.67 2.0  
0.25 1.9 0.57 1.9  
min 0.59  
Note  
1. Dimension A is including plating thickness.  
sot1118d_po  
References  
Outline  
version  
IEC  
European  
projection  
Issue date  
JEDEC  
- - -  
JEITA  
14-07-16  
14-10-16  
SOT1118D  
Fig. 26. Package outline DFN2020D-6 (SOT1118D)  
©
PBSS4260PANPS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 February 2016  
16 / 21  
 
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