V58C2128(804/404/164)S
Auto Precharge Operation
The Auto Precharge operation can be issued by having column address A10 high when a Read or Write
command is issued. If A10 is low when a Read or Write command is issued, then normal Read or Write burst
operation is executed and the bank remains active at the completion of the burst sequence. When the Auto
Precharge command is activated, the active bank automatically begins to precharge at the earliest possible
moment during the Read or Write cycle once tRAS(min) is satisfied.
Read with Auto Precharge
If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge operation
N-clock cycles measured from the last data of the burst read cycle where N is equal to the CAS latency pro-
grammed into the device. Once the autoprecharge operation has begun, the bank cannot be reactivated until
the minimum precharge time (tRP) has been satisfied.
Read with Autoprecharge Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
tP(min)
T7
T8
T9
tRAS(min)
CK, CK
Command
DQS
ACT
NOP
R w/AP
NOP
NOP
NOP
NOP
BA
NOP
D0
D1 D2 D3
DQ
Begin Autoprecharge
Earliest Bank A reactivate
V58C2128(804/404/164)S Rev. 1.6 March 2002
13
MOSEL [ MOSEL VITELIC, CORP ]
