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PC28F128G18FF 参数 Datasheet PDF下载

PC28F128G18FF图片预览
型号: PC28F128G18FF
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory  
AADM Mode  
2. Without latching A[MAX:17] in the asynchronous READ cycle, the previously latched  
A[MAX:17] applies.  
Asynchronous WRITE Cycles  
Table 56: AADM Asynchronous Write Timings  
Symbol  
tPHWL  
tELWL  
MIN (ns)  
150  
0
tWLWH  
tDVWH  
tWHEH  
tWHDX  
tWHWL  
tVPWH  
tWVVL  
tBHWH  
tWHGL  
tGHWL  
40  
40  
0
0
20  
200  
0
200  
0
0
1. A READ cycle may be restarted prior to completing a pending READ operation, but this  
may occur only once before the sense operation is allowed to complete.  
2. tVHQV applies to asynchronous read access time.  
Notes:  
Figure 53: AADM Asynchronous WRITE Cycle (Latching A[MAX:0])  
t
WHDX  
A[MAX:16]  
A[15:0]  
DQ[15:0]  
A/DQ[15:0]  
ADV#  
t
WHEH  
CE#  
OE#  
t
t
t
DVWH  
ELWL  
GHWL  
t
WHGL  
t
t
t
ELWL  
WLWH  
WHWL  
WE#  
t
BHWH  
WP#  
RST#  
t
PHWL  
1. CE# need not be de-asserted at beginning of cycle if OE# does not have output control.  
Note:  
PDF: 09005aef8448483a  
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
112  
© 2011 Micron Technology, Inc. All rights reserved.