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N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
READ REGISTER and WRITE REGISTER Operations  
Figure 12: WRITE LOCK REGISTER Command  
Extended  
0
7
8
Cx  
C
LSB  
A[MIN]  
LSB  
DIN  
DIN  
DIN  
DIN  
DIN  
DIN  
DIN  
DIN  
DIN  
DQ[0]  
Command  
MSB  
A[MAX]  
MSB  
Dual  
0
3
4
Cx  
C
LSB  
A[MIN]  
LSB  
DIN  
DIN  
DIN  
DIN  
DIN  
DQ[1:0]  
Command  
MSB  
A[MAX]  
MSB  
Quad  
0
1
2
Cx  
C
LSB  
A[MIN]  
LSB  
DIN  
DIN  
DIN  
DQ[3:0]  
Command  
MSB  
A[MAX]  
MSB  
1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).  
For dual SPI protocol, Cx = 3 + ((A[MAX] + 1)/2).  
For quad SPI protocol, Cx = 1 + ((A[MAX] + 1)/4).  
Note:  
CLEAR FLAG STATUS REGISTER Command  
To execute the CLEAR FLAG STATUS REGISTER command and clear the error bits  
(erase, program, and protection), S# is driven LOW. For extended SPI protocol, the com-  
mand code is input on DQ0. For dual SPI protocol, the command code is input on  
DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0]. The operation  
is terminated by driving S# HIGH at any time.  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
38  
© 2011 Micron Technology, Inc. All rights reserved.  
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