欢迎访问ic37.com |
会员登录 免费注册
发布采购

N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号N25Q512A13GF840E的Datasheet PDF文件第33页浏览型号N25Q512A13GF840E的Datasheet PDF文件第34页浏览型号N25Q512A13GF840E的Datasheet PDF文件第35页浏览型号N25Q512A13GF840E的Datasheet PDF文件第36页浏览型号N25Q512A13GF840E的Datasheet PDF文件第38页浏览型号N25Q512A13GF840E的Datasheet PDF文件第39页浏览型号N25Q512A13GF840E的Datasheet PDF文件第40页浏览型号N25Q512A13GF840E的Datasheet PDF文件第41页  
512Mb, Multiple I/O Serial Flash Memory  
READ REGISTER and WRITE REGISTER Operations  
Figure 11: READ LOCK REGISTER Command  
Extended  
0
7
8
Cx  
C
LSB  
A[MIN]  
DQ[0]  
DQ1  
Command  
High-Z  
MSB  
A[MAX]  
LSB  
DOUT  
DOUT  
MSB  
DOUT  
DOUT  
DOUT  
DOUT  
DOUT  
DOUT  
DOUT  
Dual  
0
3
4
Cx  
C
LSB  
A[MIN]  
LSB  
DOUT DOUT  
DOUT  
MSB  
DOUT  
DOUT  
DQ[1:0]  
Command  
MSB  
A[MAX]  
Quad  
0
1
2
Cx  
C
LSB  
A[MIN]  
LSB  
DOUT  
DOUT  
MSB  
DOUT  
DQ[3:0]  
Command  
Don’t Care  
MSB  
A[MAX]  
1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1).  
For dual SPI protocol, Cx = 3 + ((A[MAX] + 1)/2).  
For quad SPI protocol, Cx = 1 + ((A[MAX] + 1)/4).  
Note:  
WRITE LOCK REGISTER Command  
To initiate the WRITE LOCK REGISTER command, the WRITE ENABLE command must  
be executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until  
the eighth bit of the last data byte has been latched in, after which it must be driven  
HIGH. The command code is input on DQn, followed by address bytes that point to a  
location in the sector, and then one data byte that contains the desired settings for lock  
register bits 0 and 1.  
When execution is complete, the write enable latch bit is cleared within tSHSL2 and no  
error bits are set. Because lock register bits are volatile, change to the bits is immediate.  
WRITE LOCK REGISTER can be executed when an ERASE SUSPEND operation is in ef-  
fect. After the data is latched in, S# must be driven HIGH.  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
37  
© 2011 Micron Technology, Inc. All rights reserved.  
 复制成功!