欢迎访问ic37.com |
会员登录 免费注册
发布采购

N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号N25Q512A13GF840E的Datasheet PDF文件第32页浏览型号N25Q512A13GF840E的Datasheet PDF文件第33页浏览型号N25Q512A13GF840E的Datasheet PDF文件第34页浏览型号N25Q512A13GF840E的Datasheet PDF文件第35页浏览型号N25Q512A13GF840E的Datasheet PDF文件第37页浏览型号N25Q512A13GF840E的Datasheet PDF文件第38页浏览型号N25Q512A13GF840E的Datasheet PDF文件第39页浏览型号N25Q512A13GF840E的Datasheet PDF文件第40页  
512Mb, Multiple I/O Serial Flash Memory  
READ REGISTER and WRITE REGISTER Operations  
Table 19: Lock Register (Continued)  
Note 1 applies to entire table  
Bit  
Name  
Settings  
Description  
0
Sector write lock 0 = Cleared (Default)  
1 = Set  
Volatile bit: the device always powers-up with this bit cleared, which  
means that PROGRAM and ERASE operations in this sector can be  
executed and sector content modified.  
When this bit is set, PROGRAM and ERASE operations in this sector  
will not be executed.  
1. Sector lock register bits 1:0 are written to by the WRITE LOCK REGISTER command. The  
command will not execute unless the sector lock down bit is cleared.  
Note:  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
36  
© 2011 Micron Technology, Inc. All rights reserved.  
 复制成功!