2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD Supply
Relative to VSS .................................... -0.5V to +4.6V
Voltage on VDDQ Supply
Relative to VSS .................................... -0.5V to +4.6V
VIN ...............................................-0.5V to VDDQ + 0.5V
Storage Temperature (plastic) ............ -55°C to +150°C
Junction Temperature** .................................... +150°C
Short Circuit Output Current ........................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ TA ≤ +70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL MIN
MAX
VDD + 0.3
0.8
UNITS
V
NOTES
1, 2
1, 2
3
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
VIH
VIL
ILI
2.0
-0.3
-1.0
-1.0
V
0V ≤ VIN ≤ VDD
Output(s) disabled,
1.0
µA
µA
ILO
1.0
0V ≤ VIN ≤ VDD
Output High Voltage
Output Low Voltage
Supply Voltage
IOH = -4.0mA
VOH
VOL
2.4
–
–
V
V
V
V
1, 4
1, 4
1
IOL = 8.0mA
0.4
3.6
VDD
VDD
3.135
3.135
Isolated Output Buffer Supply
VDDQ
1, 5
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
Inputs
VIHQ
VIH
1.7
1.7
VDDQ + 0.3
VDD + 0.3
V
V
1, 2
1, 2
Input Low (Logic 0) Voltage
Input Leakage Current
VIL
ILI
-0.3
-1.0
-1.0
0.7
1.0
1.0
V
1, 2
3
0V ≤ VIN ≤ VDD
µA
µA
Output Leakage Current
Output(s) disabled,
ILO
0V ≤ VIN ≤ VDDQ (DQx)
Output High Voltage
Output Low Voltage
IOH = -2.0mA
IOH = -1.0mA
VOH
VOH
1.7
2.0
–
–
V
V
1, 4
1, 4
IOL = 2.0mA
IOL = 1.0mA
VOL
VOL
–
–
0.7
0.4
V
V
1, 4
1, 4
Supply Voltage
VDD
3.135
2.375
3.6
2.9
V
V
1
1
Isolated Output Buffer Supply
VDDQ
NOTE: 1. All voltages referenced to VSS (GND).
t
2. Overshoot:
Undershoot: VIL ≥ -0.7V for t ≤ KC/2 for I ≤ 20mA
Power-up: VIH ≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = 10µA.
VIH ≤ +4.6V for t ≤ KC/2 for I ≤ 20mA
t
4. The load used for VOH, VOL testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
than the stated DC values. AC I/O curves are available upon request.
5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together for 3.3V I/O.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000,MicronTechnology,Inc.
9
MICRON [ MICRON TECHNOLOGY ]
