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MT58L64L32F 参数 Datasheet PDF下载

MT58L64L32F图片预览
型号: MT58L64L32F
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB : 128K ×18 , 64K X 32/36流通型SyncBurst SRAM [2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM]
分类和应用: 静态存储器
文件页数/大小: 24 页 / 481 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2Mb: 128K x 18, 64K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
TQFP PIN DESCRIPTIONS (continued)  
x18  
x32/x36  
SYMBOL TYPE  
DESCRIPTION  
85  
85  
ADSC#  
Input Synchronous Address Status Controller: This active LOW input  
interrupts any ongoing burst, causing a new external address to be  
registered. A READ or WRITE is performed using the new address if  
CE# is LOW. ADSC# is also used to place the chip into power-down  
state when CE# is HIGH.  
31  
64  
31  
64  
MODE  
ZZ  
Input Mode: This input selects the burst sequence. A LOW on this pin  
selects linear burst.NC or HIGH on this pin selects interleaved  
burst.Do not alter input state while device is operating.  
Input Snooze Enable: This active HIGH, asynchronous input causes the  
device to enter a low-power standby mode in which all data in the  
memory array is retained. When ZZ is active, all other inputs are  
ignored.  
(a) 58, 59,  
62, 63, 68, 69, 56-59, 62, 63  
72, 73  
(b) 8, 9, 12,  
13, 18, 19, 22, 72-75, 78, 79  
(a) 52, 53,  
DQa  
DQb  
Input/ SRAM Data I/Os: For the x18 version, Byte ais DQa pins; Byte b”  
Output is DQb pins. For the x32 and x36 versions, Byte ais DQa pins;  
Byte bis DQb pins; Byte cis DQc pins; Byte dis DQd pins.  
Input data must meet setup and hold times around the rising edge  
of CLK.  
(b) 68, 69,  
23  
(c) 2, 3, 6-9,  
12, 13  
(d) 18, 19,  
22-25, 28, 29  
DQc  
DQd  
74  
24  
51  
80  
1
NC/DQPa  
NC/DQPb  
NC/DQPc  
NC/DQPd  
NC/ No Connect/Parity Data I/Os: On the x32 version, these pins are No  
I/O  
Connect (NC). On the x18 version, Byte aparity is DQPa; Byte b”  
parity is DQPb. On the x36 version, Byte aparity is DQPa; Byte  
bparity is DQPb; Byte cparity is DQPc; Byte dparity is DQPd.  
30  
15, 41, 65, 91 15, 41, 65, 91  
VDD  
Supply Power Supply: See DC Electrical Characteristics and Operating  
Conditions for range.  
4, 11, 20, 27, 4, 11, 20, 27,  
54, 61, 70, 77 54, 61, 70, 77  
VDDQ  
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and  
Operating Conditions for range.  
5, 10, 14, 17, 5, 10, 14, 17,  
21, 26, 40, 55, 21, 26, 40, 55,  
60, 67, 71, 76, 60, 67, 71, 76,  
VSS  
Supply Ground: GND.  
90  
90  
38, 39, 42, 43 38, 39, 42, 43  
DNU  
NC  
Do Not Use: These signals may either be unconnected or wired to  
GND to improve package heat dissipation.  
1-3, 6, 7, 16,  
25, 28-30,  
16, 66  
50  
No Connect: These signals are not internally connected and may be  
connected to ground to improve package heat dissipation.  
51-53, 56, 57,  
66, 75, 78, 79,  
95, 96  
50  
NC/SA  
No Connect: This pin is reserved for address expansion.  
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM  
MT58L128L18F_2.p65 Rev. 6/01  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
6
©2000,MicronTechnology,Inc.