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MT58L64L32F 参数 Datasheet PDF下载

MT58L64L32F图片预览
型号: MT58L64L32F
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB : 128K ×18 , 64K X 32/36流通型SyncBurst SRAM [2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM]
分类和应用: 静态存储器
文件页数/大小: 24 页 / 481 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT58L64L32F的Datasheet PDF文件第1页浏览型号MT58L64L32F的Datasheet PDF文件第2页浏览型号MT58L64L32F的Datasheet PDF文件第3页浏览型号MT58L64L32F的Datasheet PDF文件第4页浏览型号MT58L64L32F的Datasheet PDF文件第6页浏览型号MT58L64L32F的Datasheet PDF文件第7页浏览型号MT58L64L32F的Datasheet PDF文件第8页浏览型号MT58L64L32F的Datasheet PDF文件第9页  
2Mb: 128K x 18, 64K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
TQFP PIN DESCRIPTIONS  
x18  
x32/x36  
SYMBOL TYPE  
DESCRIPTION  
37  
36  
37  
36  
SA0  
SA1  
SA  
Input Synchronous Address Inputs: These inputs are registered and must  
meet the setup and hold times around the rising edge of CLK.  
32-35, 44-49, 32-35, 44-49,  
80-82, 99,  
100  
81, 82, 99,  
100  
93  
94  
93  
94  
95  
96  
BWa#  
BWb#  
BWc#  
BWd#  
Input Synchronous Byte Write Enables: These active LOW inputs allow  
individual bytes to be written and must meet the setup and hold  
times around the rising edge of CLK. A byte write enable is LOW  
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,  
BWa# controls DQa pins and DQPa; BWb# controls DQb pins and  
DQPb. For the x32 and x36 versions, BWa# controls DQa pins and  
DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins  
and DQPc; BWd# controls DQd pins and DQPd. Parity is only  
available on the x18 and x36 versions.  
87  
88  
89  
87  
88  
89  
BWE#  
GW#  
CLK  
Input Byte Write Enable: This active LOW input permits BYTE WRITE  
operations and must meet the setup and hold times around the  
rising edge of CLK.  
Input Global Write: This active LOW input allows a full 18-, 32-, or 36-bit  
WRITE to occur independent of the BWE# and BWx# lines and must  
meet the setup and hold times around the rising edge of CLK.  
Input Clock: This signal registers the address, data, chip enable, byte  
write enables and burst control inputs on its rising edge. All  
synchronous inputs must meet setup and hold times around the  
clocks rising edge.  
98  
92  
97  
98  
92  
97  
CE#  
CE2#  
CE2  
Input Synchronous Chip Enable: This active LOW input is used to enable  
the device and conditions the internal use of ADSP#. CE# is sampled  
only when a new external address is loaded.  
Input Synchronous Chip Enable: This active LOW input is used to enable  
the device and is sampled only when a new external address is  
loaded.  
Input Synchronous Chip Enable: This active HIGH input is used to enable  
the device and is sampled only when a new external address is  
loaded.  
86  
83  
86  
83  
OE#  
Input Output Enable: This active LOW, asynchronous input enables the  
data I/O output drivers.  
ADV#  
Input Synchronous Address Advance: This active LOW input is used to  
advance the internal burst counter, controlling burst access after  
the external address is loaded. A HIGH on this pin effectively causes  
wait states to be generated (no address advance). To ensure use of  
correct address during a WRITE cycle, ADV# must be HIGH at the  
rising edge of the first clock after an ADSP# cycle is initiated.  
84  
84  
ADSP#  
Input Synchronous Address Status Processor: This active LOW input  
interrupts any ongoing burst, causing a new external address to be  
registered. A READ is performed using the new address,  
independent of the byte write enables and ADSC#, but dependent  
upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-  
down state is entered if CE2 is LOW or CE2# is HIGH.  
(continued on next page)  
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM  
MT58L128L18F_2.p65 Rev. 6/01  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
5
©2000,MicronTechnology,Inc.  
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