2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
IDD OPERATINGCONDITIONSANDMAXIMUMLIMITS
(Note: 1) (0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)
MAX
TYP -6.8 -7.5 -8.5
DESCRIPTION
CONDITIONS
SYM
-10 UNITS NOTES
Power Supply
Current: Operating
Device selected; All inputs ≤ VIL or ≥ VIH
;
Cycle time ≥ tKC (MIN);
I
DD
65
20
265
70
245
65
225
65
150
50
mA
mA
2, 3, 4
2, 3, 4
V
DD = MAX; Outputs open
Power Supply
Current: Idle
Device selected; VDD = MAX;
ADSC#, ADSP#, ADV#, GW#, BWx# ≥
I
DD1
V
IH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time ≥ tKC (MIN); Outputs open
CMOS Standby
TTL Standby
Device deselected; VDD = MAX;
All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
All inputs static; CLK frequency = 0
I
SB
SB
SB
2
0.5
6
10
25
70
10
25
65
10
25
65
10
25
50
mA
mA
mA
3, 4
3, 4
3, 4
Device deselected; VDD = MAX;
All inputs ≤ VIL or ≥ VIH
;
I
3
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, ADV#, GW#, BWx# ≥
I
4
20
V
IH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time ≥ tKC (MIN)
NOTE: 1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.
5. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
6. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
7. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
8. Typical values are measured at 3.3V, 25°C, and 15ns cycle time.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000,MicronTechnology,Inc.
10
MICRON [ MICRON TECHNOLOGY ]
