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MT58L64L32F 参数 Datasheet PDF下载

MT58L64L32F图片预览
型号: MT58L64L32F
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB : 128K ×18 , 64K X 32/36流通型SyncBurst SRAM [2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM]
分类和应用: 静态存储器
文件页数/大小: 24 页 / 481 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2Mb: 128K x 18, 64K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS  
(Note 1) (0°C TA +70°C; VDD = +3.3V +0.3V/-0.165V)  
-6.8  
-7.5  
-8.5  
-10  
DESCRIPTION  
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES  
Clock  
Clock cycle time  
Clock frequency  
Clock HIGH time  
t
KC  
KF  
8.0  
8.8  
10.0  
15  
ns  
MHz  
ns  
f
125  
6.8  
113  
7.5  
100  
8.5  
66  
t
KH  
1.8  
1.8  
1.9  
1.9  
1.9  
1.9  
4.0  
4.0  
2
2
t
Clock LOW time  
KL  
ns  
Output Times  
t
Clock to output valid  
Clock to output invalid  
Clock to output in Low-Z  
Clock to output in High-Z  
OE# to output valid  
OE# to output in Low-Z  
OE# to output in High-Z  
Setup Times  
KQ  
10.0  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
KQX  
KQLZ  
KQHZ  
OEQ  
OELZ  
OEHZ  
1.5  
1.5  
1.5  
1.5  
3.0  
1.5  
3.0  
1.5  
3
t
3, 4, 5, 6  
3, 4, 5, 6  
7
3, 4, 5, 6  
3, 4, 5, 6  
t
3.8  
3.8  
4.2  
4.2  
5.0  
5.0  
5.0  
5.0  
t
t
0
0
0
0
t
3.8  
4.2  
5.0  
5.0  
t
Address  
Address status (ADSC#, ADSP#)  
Address advance (ADV#)  
AS  
1.8  
1.8  
1.8  
1.8  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.5  
2.5  
2.5  
2.5  
ns  
ns  
ns  
ns  
8, 9  
8, 9  
8, 9  
8, 9  
t
ADSS  
t
AAS  
WS  
t
Byte write enables  
(BWa#-BWd#, GW#, BWE#)  
t
Data-in  
Chip enable (CE#)  
Hold Times  
Address  
Address status (ADSC#, ADSP#)  
Address advance (ADV#)  
DS  
1.8  
1.8  
2.0  
2.0  
2.0  
2.0  
2.5  
2.5  
ns  
ns  
8, 9  
8, 9  
t
CES  
t
AH  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
ns  
ns  
ns  
ns  
8, 9  
8, 9  
8, 9  
8, 9  
t
ADSH  
t
AAH  
t
Byte write enables  
WH  
(BWa#-BWd#, GW#, BWE#)  
t
Data-in  
Chip enable (CE#)  
DH  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
ns  
ns  
8, 9  
8, 9  
t
CEH  
NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 for 3.3V I/O (VDDQ = +3.3V +0.3V/-0.165V) and  
Figure 3 for 2.5V I/O (VDDQ = +2.5V +0.4V/-0.125V).  
2. Measured as HIGH above VIH and LOW below VIL.  
3. This parameter is measured with the output loading shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.  
4. This parameter is sampled.  
5. Transition is measured 500mV from steady state voltage.  
6. Refer to Technical Note TN-58-09, Synchronous SRAM Bus Contention Design Considerations,for a more thorough  
discussion on these parameters.  
7. OE# is a Dont Carewhen a byte write enable is sampled LOW.  
8. A READ cycle is defined by byte write enables all HIGH or ADSP# LOW for the required setup and hold times. A WRITE  
cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold times.  
9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK  
when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold  
times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at  
each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled.  
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM  
MT58L128L18F_2.p65 Rev. 6/01  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000,MicronTechnology,Inc.  
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