2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
TQFP CAPACITANCE
DESCRIPTION
CONDITIONS
TA = 25°C; f = 1 MHz;
VDD = 3.3V
SYMBOL
TYP
2.7
4
MAX
3.5
5
UNITS
pF
NOTES
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
CI
CO
CA
CCK
1
1
1
1
pF
2.5
2.5
3.5
3.5
pF
pF
TQFPTHERMALRESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL TYP
UNITS NOTES
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
θJA
40
°C/W
1
Thermal Resistance
(Junction to Top of Case)
θJC
8
°C/W
1
NOTE: 1. This parameter is sampled.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000,MicronTechnology,Inc.
11
MICRON [ MICRON TECHNOLOGY ]
