2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to ISB2Z. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, ISB2Z is guaranteed
t
after the setup time ZZ is met. Any access pending
when the device enters SNOOZE MODE is not guaran-
teed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending opera-
tions are completed.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL MIN
MAX
10
tKC
UNITS NOTES
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
ZZ ≥ VIH
ISB2Z
tZZ
mA
ns
ns
ns
ns
1
1
1
1
tRZZ
tZZI
tRZZI
tKC
0
tKC
NOTE: 1. This parameter is sampled.
SNOOZE MODE WAVEFORM
CLK
t
ZZ
t
RZZ
ZZ
t
ZZI
I
SUPPLY
I
ISB2Z
t
RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000,MicronTechnology,Inc.
14
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