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MT4C4M4B1TG-6 参数 Datasheet PDF下载

MT4C4M4B1TG-6图片预览
型号: MT4C4M4B1TG-6
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM [DRAM]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 360 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第1页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第2页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第3页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第4页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第6页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第7页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第8页浏览型号MT4C4M4B1TG-6的Datasheet PDF文件第9页  
4 MEG x 4  
FPM DRAM  
ICC OPERATING CONDITIONS AND MAXIMUM LIMITS  
(Notes: 1, 2, 3, 5, 6) [Vcc (MIN) £ Vcc £ Vcc (MAX)]  
3.3V  
5V  
2K  
4K  
2K  
4K  
PARAM ETER/CONDITION  
SYM SPEED REFRESH REFRESH REFRESH REFRESH UNITS NOTES  
STANDBYCURRENT:TTL  
I
CC  
1
ALL  
ALL  
ALL  
1
1
1
1
mA  
mA  
µA  
(RAS# = CAS# = VIH  
)
STANDBYCURRENT:CMOS(non-“S” version only)  
(RAS# = CAS# = other inputs = VCC - 0.2V)  
ICC  
2
500  
150  
500  
150  
500  
150  
500  
150  
STANDBYCURRENT:CMOS(“S” version only)  
(RAS# = CAS# = other inputs = VCC - 0.2V)  
ICC2  
OPERATINGCURRENT:Random READ/WRITE  
Average power supplycurrent  
-5  
-6  
110  
100  
90  
80  
140  
130  
120  
110  
I
CC  
3
mA  
mA  
mA  
23  
23  
(RAS#, CAS#, addresscycling:tRC= tRC[MIN])  
OPERATINGCURRENT:FASTPAGEMODE  
Average power supplycurrent  
-5  
-6  
110  
100  
100  
90  
110  
100  
100  
90  
ICC  
4
(RAS# = VIL, CAS#, address cycling: tPC = tPC [MIN])  
REFRESHCURRENT:RAS#-ONLY  
-5  
-6  
110  
100  
90  
80  
140  
130  
120  
110  
Average power supplycurrent  
ICC  
5
(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])  
REFRESHCURRENT:CBR  
-5  
-6  
110  
100  
90  
80  
140  
130  
120  
110  
Average power supplycurrent  
I
CC  
6
mA  
µA  
4, 7  
4, 7  
(RAS#, CAS#, addresscycling:tRC= tRC[MIN])  
REFRESHCURRENT:Extended (S” version only)  
Average power supplycurrent:CAS# = 0.2Vor  
CBR cycling; RAS# = tRAS (MIN); WE# = VCC - 0.2V;  
A0-A11, OE# and DIN = VCC - 0.2V or 0.2V  
(DIN may be left open)  
ALL  
tRC  
300  
300  
300  
300  
I
CC  
7
62.5  
31.25  
62.5  
31.25  
µs  
23  
REFRESHCURRENT:Self (S” version only)  
Average power supplycurrent:CBRwith  
RAS# žtRASS(MIN)and CAS# held LOW;  
WE# = VCC - 0.2V; A0-A11, OE# and  
I
CC  
8
ALL  
300  
300  
300  
300  
µA  
4, 7  
D
IN = VCC - 0.2V or 0.2V (DIN may be left open)  
CAPACITANCE  
(Note: 6)  
PARAMETER  
SYMBOL M AX  
UNITS  
p F  
Input Capacitance: Address pins  
Input Capacitance: RAS#, CAS#, WE#, OE#  
Input/Output Capacitance: DQ  
CI1  
CI2  
CIO  
5
7
7
p F  
p F  
4 Meg x 4 FPM DRAM  
D49_5V.p65 – Rev. 5/00  
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.  
©2000, Micron Technology, Inc.  
5
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