64Mb: x32
SDRAM
NOTES
1. All voltages referenced to VSS.
13. IDD specifications are tested after the device is prop-
erly initialized.
14. Timing actually specified by CKS; clock(s) speci-
2. This parameter is sampled. VDD, VDDQ = +3.3V;
f = 1 MHz, TA = 25°C; pin under test biased at 1.4V.
AC can range from 0pF to 6pF.
3. IDD is dependent on output loading and cycle rates.
Specified values are obtained with minimum cycle
time and the outputs open.
t
fied as a reference only at minimum cycle rate.
t
t
15. Timing actually specified by WR plus RP; clock(s)
specified as a reference only at minimum cycle rate.
t
16. Timing actually specified by WR.
4. Enables on-chip refresh and address counters.
5. The minimum specifications are used only to indi-
cate cycle time at which proper operation over the
17. Required clocks are specified by JEDEC function-
ality and are not dependent on any timing param-
eter.
18. The IDD current will decrease as the CAS latency is
reduced. This is due to the fact that the maximum
cycle rate is slower as the CAS latency is reduced.
19. Address transitions average one transition every
two clocks.
full temperature range (0°C ≤ TA
≤
+70°C and
-40°C ≤ TA ≤ +85°C for IT parts) is ensured.
6. An initial pause of 100µs is required after power-
up, followed by two AUTO REFRESH commands,
before proper device operation is ensured. (VDD
and VDDQ must be powered up simultaneously. VSS
and VSSQ must be at same potential.) The two
AUTO REFRESH command wake-ups should be
20. CLK must be toggled a minimum of two times dur-
ing this period.
t
21. Based on CK = 143 MHz for -7, 166 MHz for -6,
t
repeated any time the REF refresh requirement is
183 MHz for -55, and 200 MHz for -5.
exceeded.
7. AC characteristics assume T = 1ns.
8. In addition to meeting the transition rate specifi-
cation, the clock and CKE must transit between VIH
and VIL (or between VIL and VIH) in a monotonic
manner.
22. VIH overshoot: VIH(MAX) = VDDQ + 1.2V for a pulse
width ≤ 3ns, and the pulse width cannot be greater
than one third of the cycle rate. VIL undershoot:
VIL(MIN) = -1.2V for a pulse width ≤ 3ns, and the
pulse width cannot be greater than one third of the
cycle rate.
t
23. The clock frequency must remain constant during
access or precharge states (READ, WRITE, includ-
Q
30pF
t
ing WR, and PRECHARGE commands). CKE may
be used to reduce the data rate.
24. Auto precharge mode only.
9. Outputs measured at 1.5V with equivalent load:
10. HZ defines the time at which the output achieves
25. JEDEC and PC100 specify three clocks.
26. CK = 7ns for -7, 6ns for -6, 5.5ns for -5.5, and
t
t
the open circuit condition; it is not a reference to
VOH or VOL. The last valid data element will meet
tOH before going High-Z.
5ns for -5.
27. VDD(MIN) = 3.135V for -6, -55, and -5 speed grades.
28. Check factory for availability of specially screened
t
11. AC timing and IDD tests have VIL = .25 and VIH = 2.75,
with timing referenced to 1.5V crossover point.
12. Other input signals are allowed to transition no
more than once in any two-clock period and are
otherwise at valid VIH or VIL levels.
devices having WR = 10ns. tWR = 1 tCK for 100 MHz
and slower (tCK = 10ns and higher) in manual
precharge.
64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2002,MicronTechnology,Inc.
35
MICRON [ MICRON TECHNOLOGY ]
