64Mb: x32
SDRAM
IDD SPECIFICATIONSANDCONDITIONS
(Notes: 1, 6, 11, 13, 27; notes appear on page 35) (VDD, VDDQ = +3.3V 0.3V)
MAX
PARAMETER/CONDITION
SYMBOL
-6
-7
UNITS NOTES
OPERATING CURRENT: Active Mode;
IDD1
150
130
mA
3, 18,
19, 26
t
Burst = 2; READ or WRITE; tRC = RC (MIN);
CAS latency = 3
STANDBY CURRENT: Power-Down Mode;
CKE = LOW; All banks idle
IDD2
IDD3
2
2
mA
mA
STANDBY CURRENT: Active Mode; CS# = HIGH;
60
50
3, 12,
19, 26
t
CKE = HIGH; All banks active after RCD met;
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active,
CAS latency = 3
IDD4
IDD5
IDD6
180
225
2
160
225
2
mA
mA
mA
3, 18,
19, 26
t
AUTO REFRESH CURRENT:
tRFC = RFC (MIN)
3, 12,
18, 19,
26, 29
CAS latency = 3; CKE, CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
4
IDD SPECIFICATIONSANDCONDITIONS
(Notes: 1, 6, 11, 13, 27; notes appear on page 35) (VDD, VDDQ = +3.3V 0.3V)
MAX
PARAMETER/CONDITION
SYMBOL
-5
-55
UNITS NOTES
OPERATING CURRENT: Active Mode;
IDD1
200
190
mA
3, 18,
19, 26
t
Burst = 2; READ or WRITE; tRC = RC (MIN);
CAS latency = 3
STANDBYCURRENT:Power-DownMode;
CKE = LOW; All banks idle
IDD2
IDD3
2
2
mA
mA
STANDBY CURRENT: Active Mode; CS# = HIGH;
80
70
3, 12,
t
CKE = HIGH; All banks active after RCD met;
19, 26
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active,
CAS latency = 3
IDD4
IDD5
IDD6
280
225
2
260
225
2
mA
mA
mA
3, 18,
19, 26
AUTOREFRESHCURRENT:
tRFC = tRFC (MIN)
3, 12,
18, 19,
26, 29
CAS latency = 3; CKE, CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
4
64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2002,MicronTechnology,Inc.
31
MICRON [ MICRON TECHNOLOGY ]
