64Mb: x32
SDRAM
CAPACITANCE
(Note: 2; notes appear on page 35)
PARAMETER
SYMBOL MIN
MAX UNITS
Input Capacitance: CLK
CI1
CI2
CIO
2.5
2.5
4.0
4.0
4.0
6.5
pF
pF
pF
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 35)
AC CHARACTERISTICS
PARAMETER
Access time from CLK
(pos.edge)
-5
-55
SYMBOL
MIN MAX MIN MAX UNITS NOTES
t
CL = 3
CL = 2
CL = 1
AC(3)
AC(2)
AC(1)
4.5
-
-
5
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
t
t
t
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
AH
AS
CH
CL
1
1.5
2
2
5
1
1.5
2
2
5.5
-
t
t
t
t
CL = 3
CL = 2
CL = 1
CK (3)
CK (2)
23
23
23
t
-
t
CK (1)
-
1
1.5
1
1.5
1
1.5
4.5
-
-
1
-
1
1.5
1
1.5
1
1.5
5
-
-
1
t
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
CKH
CKS
t
t
CMH
CMS
t
t
DH
DS
t
Data-in setup time
Data-outhigh-impedancetime
t
CL = 3
CL = 2
CL = 1
HZ (3)
HZ (2)
HZ (1)
10
10
10
t
t
t
Data-outlow-impedancetime
Data-outholdtime
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
AUTO REFRESH period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
PRECHARGE command period
ACTIVE bankatoACTIVEbankbcommand
Transition time
LZ
t
OH
1.5
2
t
RAS
RC
RFC
38.7 120k 38.7 120k
t
55
60
15
55
60
t
t
RCD
16.5
t
REF
64
64
t
RP
15
10
0.3
2
16.5
11
t
RRD
25
7
24
20
t
T
1.2
0.3
2
55
1.2
t
t
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
WR
CK
ns
t
XSR
55
64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2002,MicronTechnology,Inc.
32
MICRON [ MICRON TECHNOLOGY ]
