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MT48H16M32LFCM-75L 参数 Datasheet PDF下载

MT48H16M32LFCM-75L图片预览
型号: MT48H16M32LFCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Op e ra t io n s  
Fixed-length READ bursts may be truncated with a BURST TERMINATE command,  
provided that auto precharge was not activated. The BURST TERMINATE command  
should be issued x cycles before the clock edge at which the last desired data element is  
valid, where x = CL - 1. This is shown in Figure 17 on page 29 for each possible CL; data  
element n + 3 is the last desired data element of a longer burst.  
Fig u re 17: Te rm in a t in g a READ Bu rst  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
BURST  
TERMINATE  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
ADDRESS  
DQ  
X = 1 cycle  
BANK,  
COL n  
D
OUT  
D
n + 1  
OUT  
DOUT  
DOUT  
n + 3  
n
n + 2  
CL = 2  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
COMMAND  
ADDRESS  
DQ  
BURST  
TERMINATE  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
X = 2 cycles  
BANK,  
COL n  
D
OUT  
DOUT  
D
n + 2  
OUT  
DOUT  
n + 3  
n
n + 1  
CL = 3  
DON’T CARE  
Notes: 1. DQM is LOW.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2005 Micron Technology, Inc. All rights reserved.  
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