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MT48H16M32LFCM-75L 参数 Datasheet PDF下载

MT48H16M32LFCM-75L图片预览
型号: MT48H16M32LFCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第23页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第24页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第25页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第26页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第28页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第29页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第30页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第31页  
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Op e ra t io n s  
The DQM signal must be de-asserted prior to the WRITE command (DQM latency is  
zero clocks for input buffers) to ensure that the written data is not masked. Figure 13 on  
page 26 shows the case where the clock frequency allows for bus contention to be  
avoided without adding a NOP cycle, and Figure 15 on page 28 shows the case where the  
additional NOP is needed.  
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE  
command to the same bank (provided that auto precharge was not activated). The  
PRECHARGE command should be issued x cycles before the clock edge at which the last  
desired data element is valid, where x = CL - 1. This is shown in Figure 16 on page 28 for  
each possible CL; data element n + 3 is either the last of a burst of four or the last desired  
of a longer burst. Following the PRECHARGE command, a subsequent command to the  
t
same bank cannot be issued until RP is met. Note that part of the row precharge time is  
hidden during the access of the last data element(s).  
In the case of a fixed-length burst being executed to completion, a PRECHARGE  
command issued at the optimum time (as described above) provides the same opera-  
tion that would result from the same fixed-length burst with auto precharge. The disad-  
vantage of the PRECHARGE command is that it requires that the command and address  
buses be available at the appropriate time to issue the command; the advantage of the  
PRECHARGE command is that it can be used to truncate fixed-length bursts.  
Fig u re 14: READ-t o -WRITE  
T0  
T1  
T2  
T3  
T4  
CLK  
DQM  
READ  
NOP  
NOP  
NOP  
WRITE  
COMMAND  
ADDRESS  
BANK,  
COL n  
BANK,  
COL b  
t
CK  
t
HZ  
DOUT  
n
DIN b  
DQ  
t
DS  
DON’T CARE  
Notes: 1. CL = 3. The READ command may be to any bank, and the WRITE command may be to any  
bank. If a burst of one is used, then DQM is not required.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2005 Micron Technology, Inc. All rights reserved.  
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