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MT47H128M8HV-187EAT 参数 Datasheet PDF下载

MT47H128M8HV-187EAT图片预览
型号: MT47H128M8HV-187EAT
PDF下载: 下载PDF文件 查看货源
内容描述: DDR2 SDRAM [DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 131 页 / 9265 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR2 SDRAM  
Functional Description  
Automotive Temperature  
The automotive temperature (AT) option, if offered, has two simultaneous require-  
ments: ambient temperature surrounding the device cannot be less than –40°C or  
greater than +105°C, and the case temperature cannot be less than –40°C or greater  
than +105°C. JEDEC specifications require the refresh rate to double when TC exceeds  
+85°C; this also requires use of the high-temperature self refresh option. Additionally,  
ODT resistance and the input/output impedance must be derated when TC is < 0°C or >  
+85°C.  
General Notes  
The functionality and the timing specifications discussed in this data sheet are for the  
DLL-enabled mode of operation.  
Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ  
term is to be interpreted as any and all DQ collectively, unless specifically stated oth-  
erwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte.  
For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For the  
upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS.  
Complete functionality is described throughout the document, and any page or dia-  
gram may have been simplified to convey a topic and may not be inclusive of all  
requirements.  
Any specific requirement takes precedence over a general statement.  
PDF: 09005aef821ae8bf  
1GbDDR2.pdf – Rev. T 02/10 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
11  
© 2004 Micron Technology, Inc. All rights reserved.  
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