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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Electrical Characteristics – IDD Specifications  
Electrical Characteristics – IDD Specifications  
IDD values are for full operating range of voltage and temperature unless otherwise no-  
ted.  
Table 20: IDD Maximum Limits – Rev. B, D, F  
Speed Bin  
IDD  
Width  
x4  
DDR3-1066  
DDR3-1333  
DDR3-1600  
Units  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Notes  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2, 3, 4  
1, 5  
1, 2  
1, 2  
1, 2  
1, 2  
IDD0  
75  
100  
100  
95  
85  
110  
110  
105  
130  
150  
12  
95  
120  
120  
115  
140  
170  
12  
x8  
x16  
x4  
IDD1  
x8  
120  
130  
12  
x16  
All  
IDD2P0 (slow)  
IDD2P1 (fast)  
IDD2Q  
All  
35  
40  
45  
All  
53  
60  
67  
IDD2N  
All  
55  
65  
70  
IDD2NT  
x4, x8  
x16  
All  
75  
85  
95  
95  
105  
40  
115  
45  
IDD3P  
IDD3N  
35  
x4, x8  
x16  
x4  
57  
62  
67  
55  
60  
65  
IDD4R  
160  
160  
260  
190  
190  
290  
220  
8
200  
200  
300  
220  
220  
355  
240  
8
250  
250  
350  
250  
250  
430  
260  
8
x8  
x16  
x4  
IDD4W  
x8  
x16  
All  
IDD5B  
IDD6  
IDD6ET  
IDD7  
All  
All  
10  
10  
10  
x4  
250  
390  
380  
IDD2P0 + 2mA  
315  
490  
420  
IDD2P0 + 2mA  
400  
600  
460  
IDD2P0 + 2mA  
x8  
x16  
All  
IDD8  
1. TC = 85°C; SRT and ASR are disabled.  
Notes:  
2. Enabling ASR could increase IDDx by up to an additional 2mA.  
3. Restricted to TC (MAX) = 85°C.  
4. Rev B, x4 and x8 maximum limit is 7mA.  
5. TC = 85°C; ASR and ODT are disabled; SRT is enabled.  
6. The IDD values must be derated (increased) on IT-option and AT-option devices when op-  
erated outside of the range 0°C TC +85°C:  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
45  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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