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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Electrical Specifications – DC and AC  
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,  
within restrictions outlined in the SELF REFRESH section.  
5. VTT is not applied directly to the device. VTT is a system supply for signal termination re-  
sistors. Minimum and maximum values are system-dependent.  
Table 24: Input Switching Conditions  
Parameter/Condition  
DDR3-800  
DDR3-1066  
DDR3-1333  
DDR3-1600  
DDR3-1866  
DDR3-2133  
Symbol  
Unit  
Command and Address  
Input high AC voltage: Logic 1 @ 175mV  
Input high AC voltage: Logic 1 @ 150mV  
Input high AC voltage: Logic 1 @ 135 mV  
Input high AC voltage: Logic 1 @ 125 mV  
Input high DC voltage: Logic 1 @ 100 mV  
Input low DC voltage: Logic 0 @ –100mV  
Input low AC voltage: Logic 0 @ –125mV  
Input low AC voltage: Logic 0 @ –135mV  
Input low AC voltage: Logic 0 @ –150mV  
Input low AC voltage: Logic 0 @ –175mV  
VIH(AC175)min  
VIH(AC150)min  
VIH(AC135)min  
VIH(AC125)min  
VIH(DC100)min  
VIL(DC100)max  
VIL(AC125)max  
VIL(AC135)max  
VIL(AC150)max  
VIL(AC175)max  
175  
150  
175  
150  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
135  
125  
100  
–100  
–125  
–135  
100  
–100  
100  
–100  
–150  
–175  
–150  
–175  
DQ and DM  
Input high AC voltage: Logic 1  
Input high AC voltage: Logic 1  
Input high AC voltage: Logic 1  
Input high DC voltage: Logic 1  
Input low DC voltage: Logic 0  
Input low AC voltage: Logic 0  
Input low AC voltage: Logic 0  
Input low AC voltage: Logic 0  
VIH(AC175)min  
VIH(AC150)min  
VIH(AC135)min  
VIH(DC100)min  
VIL(DC100)max  
VIL(AC135)max  
VIL(AC150)max  
VIL(AC175)max  
175  
150  
150  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
135  
100  
–100  
–135  
100  
–100  
100  
–100  
–150  
–175  
–150  
1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All  
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ  
and DM inputs.  
Notes:  
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC)  
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC)  
.
.
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is  
900mV (peak-to-peak).  
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific  
speed bin, the user may choose either value for the input AC level. Whichever value is  
used, the associated setup time for that AC level must also be used. Additionally, one  
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may  
be used for data inputs.  
For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and  
V
IH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/  
command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min  
with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min  
with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
48  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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