1Gb: x4, x8, x16 DDR3 SDRAM
Write Leveling
Write Leveling
For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topolo-
gy for the commands, addresses, control signals, and clocks. Write leveling is a scheme
for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK rela-
tionship at the DRAM with a simple feedback feature provided by the DRAM. Write lev-
eling is generally used as part of the initialization process, if required. For normal
DRAM operation, this feature must be disabled. This is the only DRAM operation where
the DQS functions as an input (to capture the incoming clock) and the DQ function as
outputs (to report the state of the clock). Note that nonstandard ODT schemes are re-
quired.
The memory controller using the write leveling procedure must have adjustable delay
settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins.
This is accomplished when the DRAM asynchronously feeds back the CK status via the
DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the
DQS strobe until a CK transition from ± to 1 is detected. The DQS delay established by
this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use
fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this
procedure is shown in Figure 40.
Figure 47: Write Leveling Concept
T0
T1
T2
T3
T4
T5
T6
T7
CK#
CK
Source
Differential DQS
Tn
T0
T1
T2
T3
T4
T5
T6
CK#
CK
Destination
Differential DQS
0
0
DQ
Destination
Tn
T0
T1
T2
T3
T4
T5
T6
CK#
CK
Push DQS to capture
0–1 transition
Differential DQS
DQ
1
1
Don’t Care
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1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
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