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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Input Clock Frequency Change  
Input Clock Frequency Change  
When the DDR3 SDRAM is initialized, the clock must be stable during most normal  
states of operation. This means that after the clock frequency has been set to the stable  
state, the clock period is not allowed to deviate, except for what is allowed by the clock  
jitter and spread spectrum clocking (SSC) specifications.  
The input clock frequency can be changed from one stable clock rate to another under  
two conditions: self refresh mode and precharge power-down mode. It is illegal to  
change the clock frequency outside of those two modes. For the self refresh mode con-  
dition, when the DDR3 SDRAM has been successfully placed into self refresh mode and  
tCKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the  
clock becomes a “Don’t Care,” changing the clock frequency is permissible if the new  
clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode  
for the sole purpose of changing the clock frequency, the self refresh entry and exit  
specifications must still be met.  
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge  
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a  
logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures  
RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode,  
and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW  
before the clock frequency can change. The DDR3 SDRAM input clock frequency is al-  
lowed to change only within the minimum and maximum operating frequency speci-  
fied for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input  
clock frequency change, CKE must be held at a stable LOW level. When the input clock  
frequency is changed, a stable clock must be provided to the DRAM tCKSRX before pre-  
charge power-down may be exited. After precharge power-down is exited and tXP has  
been satisfied, the DLL must be reset via the MRS. Depending on the new clock fre-  
quency, additional MRS commands may need to be issued. During the DLL lock time,  
RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is  
ready to operate with a new clock frequency.  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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