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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Write Leveling  
Write Leveling Mode Exit Procedure  
After the DRAM are leveled, they must exit from write leveling mode before the normal  
mode can be used. Figure 49 depicts a general procedure for exiting write leveling  
mode. After the last rising DQS (capturing a 1 at T±), the memory controller should stop  
driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memo-  
ry controller to capture the applicable prime DQ state (at ~Tb±). The DQ balls become  
undefined when DQS no longer remains LOW, and they remain undefined until tMOD  
after the MRS command (at Te1).  
The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the  
t
DQS is no longer driving LOW. When ODT LOW satisfies IS, ODT must be kept LOW (at  
~Tb±) until the DRAM is ready for either another rank to be leveled or until the normal  
mode can be used. After DQS termination is switched off, write level mode should be  
disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid com-  
mand may be registered by the DRAM. Some MRS commands may be issued after tMRD  
(at Td1).  
Figure 49: Write Leveling Exit Procedure  
T0  
T1  
T2  
Ta0  
Tb0  
Tc0  
Tc1  
Tc2  
Td0  
Td1  
Te0  
Te1  
CK#  
CK  
Command  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
MRS  
MR1  
NOP  
Valid  
NOP  
Valid  
Valid  
t
MRD  
Address  
Valid  
tIS  
t
MOD  
ODT  
AOF (MIN)  
ODTLoff  
R
t
R
DQS, R DQS#  
TT  
TT,nom  
TT  
t
AOF (MAX)  
DQS, DQS#  
R
TT(DQ)  
t
WLO + WLOE  
DQ  
CK = 1  
Indicates break  
in time scale  
Undefined Driving Mode  
Transitioning  
Don’t Care  
1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing  
CK HIGH just after the T0 state.  
Note:  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
133  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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