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JS28F128P30TF75A 参数 Datasheet PDF下载

JS28F128P30TF75A图片预览
型号: JS28F128P30TF75A
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆Axcell P30-65nm闪存 [Numonyx Axcell P30-65nm Flash Memory]
分类和应用: 闪存
文件页数/大小: 90 页 / 1194 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm SBC  
Figure 15: Reset Operation Waveforms  
P1  
P2  
P2  
P3  
R5  
VIH  
VIL  
(
A) Reset during  
read mode  
RST# [P]  
RST# [P]  
RST# [P]  
VCC  
Abort  
Complete  
R5  
(B) Reset during  
VIH  
VIL  
program or block erase  
P1  
P2  
Abort  
Complete  
R5  
(C) Reset during  
VIH  
VIL  
program or block erase  
P1  
P2  
VCC  
0V  
(D) VCC Power-up to  
RST# high  
12.3  
Power Supply Decoupling  
Flash memory devices require careful power supply de-coupling. Three basic power  
supply current considerations are: 1) standby current levels; 2) active current levels;  
and 3) transient peaks produced when CE# and OE# are asserted and deasserted.  
When the device is accessed, many internal conditions change. Circuits within the  
device enable charge-pumps, and internal logic states change at high speed. All of  
these internal activities produce transient signals. Transient current magnitudes depend  
on the device outputs’ capacitive and inductive loading. Two-line control and correct  
de-coupling capacitor selection suppress transient voltage peaks.  
Because flash memory devices draw their power from VCC, VPP, and VCCQ, each power  
connection should have a 0.1 µF ceramic capacitor to ground. High-frequency,  
inherently low-inductance capacitors should be placed as close as possible to package  
leads.  
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor  
should be placed between power and ground close to the devices. The bulk capacitor is  
meant to overcome voltage droop caused by PCB trace inductance.  
Datasheet  
44  
Apr 2010  
Order Number: 208033-02