P30-65nm SBC
Table 21: DC Current Characteristics (Sheet 2 of 2)
CMOS
TTL Inputs
Inputs
(VCCQ =
2.4V - 3.6V)
(VCCQ =
1.7V - 3.6V)
Sym
Parameter
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
0.05
5
0.10
10
0.05
5
0.10
10
VPP = V
erase in progress
PPL,
I
VPP Blank Check
mA
3
PPBC
VPP = V
erase in progress
PPH,
Notes:
1.
2.
3.
4.
5.
All currents are RMS unless noted. Typical values at typical VCC, T = +25°C.
C
I
is the average current measured over any 5ms time interval 5µs after CE# is deasserted.
CCS
Sampled, not 100% tested.
I
I
is specified with the device deselected. If device is read while in erase suspend, current is I
plus I
.
CCR
CCES
, I
measured over typical or max times specified in Section 15.5, “Program and ECrCaEsSe
CCW CCE
Characteristics” on page 58.
6.
7.
if V > VCC the input load current increases to 10µA max.
IN
the I
I
I
Will increase to 200µA when VPP/WP# is at V
.
PPS, PPWS, PPES
PPH
14.2
DC Voltage Characteristics
Table 22: DC Voltage Characteristics
(1)
CMOS Inputs
(VCCQ = 1.7V – 3.6V)
TTL Inputs
(VCCQ = 2.4V – 3.6V)
Sym
Parameter
Unit
Test Conditions
Notes
Min
Max
Min
Max
V
Input Low Voltage
Input High Voltage
-0.5
0.4
-0.5
2.0
0.6
V
V
-
-
IL
2
-
V
VCCQ – 0.4
VCCQ + 0.5
VCCQ + 0.5
IH
VCC = VCC Min
V
Output Low Voltage
Output High Voltage
-
0.2
-
-
0.2
-
V
V
VCCQ = VCCQ Min
OL
I
= 100µA
OL
VCC = VCC Min
V
VCCQ – 0.2
VCCQ – 0.2
VCCQ = VCCQ Min
-
OH
I
= –100µA
OH
V
VPP Lock-Out Voltage
VCC Lock Voltage
-
0.4
-
0.4
V
V
V
-
-
-
3
-
PPLK
V
1.0
0.9
-
-
1.0
0.9
-
-
LKO
V
VCCQ Lock Voltage
-
LKOQ
Notes:
1.
2.
3.
Synchronous read mode is not supported with TTL inputs.
can undershoot to –0.4V and V can overshoot to VCCQ + 0.4V for durations of 20ns or less.
V
IL
IH
VPP ≤ V
inhibits erase and program operations. Do not use V
and V
PPLK
PPL PPH
.
outside their valid ranges
Datasheet
47
Apr 2010
OrderNumber:208033-02
MICRON [ MICRON TECHNOLOGY ]
