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AT25256B-SSHL-T-537 参数 Datasheet PDF下载

AT25256B-SSHL-T-537图片预览
型号: AT25256B-SSHL-T-537
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 32KX8, Serial, CMOS, PDSO8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 42 页 / 1320 K
品牌: MICROCHIP [ MICROCHIP ]
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AT25128B/AT25256B  
Device Commands and Addressing  
The AT25128B/AT25256B will not respond to commands other than a RDSRafter a WRSRinstruction until  
the self-timed internal write cycle has completed. When the write cycle is completed, the WEL bit in the  
STATUS register is reset to logic ‘0’.  
Figure 6-4.ꢀWRSR Waveform  
(1)  
CS  
tWC  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
SCK  
SI  
STATUS Register Data In  
WRSR Opcode (01h)  
0
0
0
0
0
0
0
1
D7  
X
X
X
D3  
D2  
X
X
MSB  
MSB  
High-Impedance  
SO  
Note:ꢀ  
1. This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid  
sequence.  
6.4.1  
Block Write-Protect Function  
The WRSRinstruction allows the user to select one of four possible combinations as to how the memory  
array will be inhibited from writing through changing the Block Write-Protect bits (BP<1:0>). The four  
levels of array protection are:  
• None of the memory array is protected.  
• Upper quarter (¼) address range is write-protected meaning the highest order address bits are read-  
only.  
• Upper half (½) address range is write-protected meaning the highest order address bits are read-  
only.  
• All of the memory array is write-protected meaning all address bits are read-only.  
The Block Write Protection levels and corresponding STATUS register control bits are shown in Table 6-4.  
Table 6-4.ꢀBlock Write-Protect Bits  
Level  
STATUS Register Bits  
Write-Protected/ReadOnly Address Range  
BP1  
0
BP0  
0
AT25128B  
None  
AT25256B  
None  
0
0
1
1(1/4)  
2(1/2)  
3(All)  
3000h-3FFFh  
2000h-3FFFh  
0000h-3FFFh  
6000h-7FFFh  
4000h – 7FFFh  
0000h – 7FFFh  
1
0
1
1
DS20006193A-page 21  
© 2019 Microchip Technology Inc.  
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