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AT25256B-SSHL-T-537 参数 Datasheet PDF下载

AT25256B-SSHL-T-537图片预览
型号: AT25256B-SSHL-T-537
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 32KX8, Serial, CMOS, PDSO8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 42 页 / 1320 K
品牌: MICROCHIP [ MICROCHIP ]
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AT25128B/AT25256B  
Write Sequence  
8.2  
Page Write  
A Page Write sequence allows up to 64 bytes to be written in the same write cycle, provided that all bytes  
are in the same row of the memory array. Partial Page Writes of less than 64 bytes are allowed. After  
each byte of data is received, the six lowest order address bits are internally incremented following the  
receipt of each data byte. The higher order address bits are not incremented and retain the memory array  
page location. If more bytes of data are transmitted that what will fit to the end of that memory row, the  
address counter will rollover to the beginning of the same row. Nevertheless, creating a rollover event  
should be avoided as previously loaded data in the page could become unintentionally altered. The  
AT25128B/AT25256B is automatically returned to the Write Disable state (WEL = 0) at the completion of  
a write cycle.  
Figure 8-2.ꢀPage Write  
CS  
(1)  
tWC  
0
1
2
3
4
5
6
7
8
9
21 22 23 24 25 26 27 28 29 30 31  
SCK  
SI  
WRITE Opcode (02h)  
Address Bits A15-A0  
Data In Byte 1  
Data In Byte 64  
0
0
0
0
0
0
1
0
A
A
A
A
A
A
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
MSB  
MSB  
MSB  
MSB  
High-Impedance  
SO  
Note:ꢀ  
1. This instruction initiates a selftimed internal write cycle (tWC) on the rising edge of CS after a valid  
sequence.  
8.3  
Polling Routine  
A polling routine can be implemented to optimize timesensitive applications that would not prefer to wait  
the fixed maximum write cycle time (tWC). This method allows the application to know immediately when  
the write cycle has completed to start a subsequent operation.  
Once the internally-timed write cycle has started, a polling routine can be initiated. This involves  
repeatedly sending Read STATUS Register (RDSR) instruction to determine if the device has completed  
its self-timed internal write cycle. If the RDY/BSY bit (bit 0 of STATUS register) = 1, the write cycle is still  
in progress. If bit 0 = 0, the write cycle has ended. If the RDY/BSY bit = 1, repeated RDSRcommands can  
be executed until the RDY/BSY bit = 0, signaling that the device is ready to execute a new instruction.  
Only the Read STATUS Register (RDSR) instruction is enabled during the write cycle.  
DS20006193A-page 25  
© 2019 Microchip Technology Inc.