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AS7C33512NTD18A-100BI 参数 Datasheet PDF下载

AS7C33512NTD18A-100BI图片预览
型号: AS7C33512NTD18A-100BI
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 512KX18, 12ns, CMOS, PBGA119, 14 X 20 MM, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 12 页 / 299 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C33512NTD16A  
AS7C33512NTD18A  
®
TQFP thermal resistance  
Description  
Conditions  
Symbol  
Typ i c a l  
40  
Units  
°C/W  
°C/W  
1–layer  
4–layer  
θ
Thermal resistance  
JA  
(junction to ambient)1  
Test conditions follow standard test methods  
and procedures for measuring thermal  
impedance, per EIA/JESD51  
θ
22  
JA  
JC  
Thermal resistance  
θ
8
°C/W  
(junction to top of case)1  
1 This parameter is sampled.  
DC electrical characteristics  
–166  
–150  
–133  
–100  
Parameter  
Symbol  
Test conditions  
VDD = Max, VIN = GND to VDD  
OE VIH, VDD = Max,  
Min Max Min Max Min Max Min Max Unit  
Input leakage  
current  
|ILI|1  
2
2
2
2
2
2
2
2
µA  
µA  
Output leakage  
current  
|ILO  
|
VOUT = GND to VDD  
Operating power  
supply current  
CE0 = VIL, CE1 = VIH, CE2 = VIL,  
f = fMax, IOUT = 0 mA  
2
ICC  
ISB  
ISB1  
ISB2  
475  
130  
30  
425  
110  
30  
400  
100  
30  
300 mA  
90  
Deselected, f = fMax, ZZ VIL  
Deselected, f = 0, ZZ 0.2V  
all VIN 0.2V or VDD – 0.2V  
Standby power  
supply current  
30  
mA  
Deselected, f = f , ZZ  
V
– 0.2V  
Max  
DD  
30  
30  
30  
30  
All VIN VIL or VIH  
VOL  
IOL = 8 mA, VDDQ = 3.465V  
IOH = –4 mA, VDDQ = 3.135V  
0.4  
0.4  
0.4  
0.4  
V
Output voltage  
VOH  
2.4  
2.4  
2.4  
2.4  
1 LBO pin has an internal pull-up and input leakage = 10 µA.  
2 I give with no output loading. I increases with faster cycle times and greater output loading.  
CC  
CC  
DC electrical characteristics for 2.5V I/O operation  
–166  
–150  
–133  
–100  
Parameter  
Symbol  
|ILO  
Test conditions  
Min Max Min Max Min Max Min Max Unit  
Output leakage  
current  
OE VIH, VDD = Max,  
VOUT = GND to VDD  
|
–1  
1
–1  
1
–1  
1
–1  
1
µA  
V
VOL  
IOL = 2 mA, VDDQ = 2.65V  
IOH = –2 mA, VDDQ = 2.35V  
0.7  
0.7  
0.7  
0.7  
Output voltage  
VOH  
1.7  
1.7  
1.7  
1.7  
3/11/02; v.1.8H  
Alliance Semiconductor  
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