AS7C331MPFS18A
®
Absolute maximum ratings
Parameter
Symbol
Min
–0.5
–0.5
–0.5
–
Max
+4.6
Unit
V
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/ O pins)
Power dissipation
VDD, VDDQ
V
VDD + 0.5
VDDQ + 0.5
1.8
V
IN
V
V
IN
PD
W
DC output current
IOUT
Tstg
–
20 mA
+150
mA
oC
oC
Storage temperature (plastic)
Temperature under bias
–65
–65
Tbias
+135
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions may affect reliability.
Recommended operating conditions
Parameter
Symbol
Min
3.135
0.0
Nominal
Max
3.6
Unit
VDD
3.3
0.0
3.3
0.0
2.5
0.0
–
Supply voltage
V
V
0.0
SS
VDDQ
3.135
0.0
3.6
3.3V I/ O supply voltage
2.5V I/ O supply voltage
V
V
V
V
0.0
SSQ
VDDQ
2.35
0.0
2.9
V
0.0
SSQ
V
2.0
–0.32
VDD + 0.3
0.8
Address and
IH
control pins
V
–
IL
Input voltages1
V
2.0
–
VDDQ + 0.3
0.8
IH
I/ O pins
V
V
–0.5
0
–
IL
Ambient operating temperature
TA
–
70
°C
1 Input voltage ranges apply to 3.3V I/ O operation. For 2.5V I/ O operation, contact factory for input specifications.
2 V min = –2.0V for pulse width less than 0.2 × t
.
IL
RC
12/ 2/ 02, v. 0.9.2 Advance Info
Alliance Semiconductor
6 of 21
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
