AS7C331MPFS18A
®
DC electrical characteristics for 3.3V I/ O operation
–250
–225
–200
–166
Parameter
Sym
Test conditions
VDD = Max, VIN = GND to VDD
OE ≥ V , VDD = Max,
Min Max Min Max Min Max Min Max Unit
Input leakage
current1
| ILI|
-2
-2
–
2
2
-2
-2
–
2
2
-2
-2
–
2
2
-2
-2
–
2
2
µA
µA
Output leakage
current
IH
| ILO
|
VOUT = GND to VDD
ICC
(Pipelined)
ICC
Operating power
supply current2
425
400
370
340 mA
CE0 = V , CE1 = V , CE2 = V ,
IL
IH
IL
f = fMax, IOUT = 0 mA
Operating power
supply current2
–
–
–
250
110
70
–
–
–
225
110
70
–
–
–
200
110
70
–
–
–
175 mA
90
(Flow-through)
ISB
Deselected, f = fMax, ZZ ≤ V
IL
Deselected, f = 0, ZZ ≤ 0.2V
all V ≤ 0.2V or ≥ VDD – 0.2V
Standby power
supply current
ISB1
ISB2
70
mA
IN
Deselected, f = f , ZZ
≥
V
– 0.2V
Max
DD
–
60
–
60
–
60
–
60
All V ≤ V or ≥ V
IN
IL
IH
V
IOL = 8 mA, VDDQ = 3.465V
IOH = –4 mA, VDDQ = 3.135V
–
0.4
–
0.4
–
0.4
–
–
0.4
V
OL
Output voltage
V
2.4
2.4
2.4
2.4
–
OH
1 LBO, FTX, and ZZX pins and the 165 BGA JTAG pins (TMSX, TDIX, and TCKX) have an internal pull-up, and input leakage = ±10 µa.
2 I given with no output loading. I increases with faster cycle times and greater output loading.
CC CC
DC electrical characteristics for 2.5V I/ O operation
–250
–225
–200
–166
Parameter
Sym
Test conditions
OE ≥ V , VDD = Max,
Min Max Min Max Min Max Min Max Unit
Output leakage
current
IH
| ILO|
–1
1
–1
1
–1
1
–1
1
µA
V
VOUT = GND to VDD
V
IOL = 2 mA, VDDQ = 2.65V
IOH = –2 mA, VDDQ = 2.35V
–
0.7
–
–
0.7
–
–
0.7
–
–
0.7
–
OL
Output voltage
V
1.7
1.7
1.7
1.7
OH
12/ 2/ 02, v. 0.9.2 Advance Info
Alliance Semiconductor
7 of 21
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
