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AS7C331MPFS18A-250TQC 参数 Datasheet PDF下载

AS7C331MPFS18A-250TQC图片预览
型号: AS7C331MPFS18A-250TQC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 21 页 / 411 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C331MPFS18A  
®
Signal descriptions  
Signal  
CLK  
I/ O Properties Description  
I
I
CLOCK  
SYNC  
SYNC  
Clock. All inputs except OE, FT, ZZ, and LBO are synchronous to this clock.  
Address. Sampled when all chip enables are active and when ADSC or ADSP are asserted.  
Data. Driven as output when the chip is enabled and when OE is active.  
A0A17  
DQ[a,b]  
I/ O  
Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0 is  
inactive, ADSP is blocked. Refer to the “Synchronous truth table” for more information.  
CE0  
CE1, CE2  
ADSP  
I
I
I
SYNC  
SYNC  
SYNC  
Synchronous chip enables. Active high and active low, respectively. Sampled on clock  
edges when ADSC is active or when CE0 and ADSP are active.  
Address strobe processor. Asserted low to load a new bus address or to enter standby  
mode.  
ADSC  
ADV  
I
I
SYNC  
SYNC  
Address strobe controller. Asserted low to load a new address or to enter standby mode.  
Advance. Asserted low to continue burst read/ write.  
Global write enable. Asserted low to write all 32/ 36 and 18 bits. When high, BWE and  
BW[a,b] control write enable.  
GWE  
BWE  
I
I
SYNC  
SYNC  
Byte write enable. Asserted low with GWE high to enable effect of BW[a,b] inputs.  
Write enables. Used to control write of individual bytes when GWE is high and BWE is  
low. If any of BW[a,b] is active with GWE high and BWE low, the cycle is a write cycle. If  
all BW[AB] are inactive, the cycle is a read cycle.  
BW[a,b]  
I
SYNC  
Asynchronous output enable. I/ O pins are driven when OE is active and the chip is in read  
mode.  
OE  
I
I
ASYNC  
STATIC  
Count mode. When driven high, count sequence follows Intel XOR convention. When  
LBO  
driven low, count sequence follows linear convention. This signal is internally pulled high.18  
TDO  
TDI  
O
I
SYNC  
SYNC  
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK (BGA only).  
Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK (BGA only).  
This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK  
(BGA only).  
TMS  
TCK  
FT  
I
O
I
SYNC  
SYNC  
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK (BGA only).  
Flow-through mode.When low, enables single register flow-through mode. Connect to  
STATIC  
ASYNC  
VDD if unused or for pipelined operation.  
ZZ  
I
Sleep. Places device in low power mode; data is retained. Connect to GND if unused.  
Write enable truth table (per byte)  
Function  
GWE  
L
BWE  
X
BWa  
X
BWb  
X
Write all bytes (a, b)  
H
L
L
L
Write byte a  
Write byte b  
H
L
L
H
H
L
H
L
H
H
X
X
Read  
H
L
H
H
ꢁꢂꢃꢄꢀX = dont care; L = low; H = high; BWE, BWn = internal write signal  
12/ 2/ 02, v. 0.9.2 Advance Info  
Alliance Semiconductor  
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