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Intel Advanced+ Boot Block Flash Memory (C3)
7.2
Operating Conditions
Table 10. Temperature and Voltage Operating Conditions
Symbol
TA
Parameter
Notes
Min
Max
Units
Operating Temperature
VCC Supply Voltage
–40
2.7
+85
3.6
3.6
3.6
2.5
2.5
3.6
12.6
°C
VCC1
1, 2
1, 2
1
Volts
VCC2
3.0
VCCQ1
VCCQ2
VCCQ3
VPP1
2.7
I/O Supply Voltage
Supply Voltage
1.65
1.8
Volts
1
1, 3
3
1.65
11.4
100,000
Volts
Volts
VPP2
Cycling
Block Erase Cycling
Cycles
NOTES:
1. VCC and VCCQ must share the same supply when they are in the VCC1 range.
2. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.
3. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on
the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of
80 hours maximum.
7.3
DC Current Characteristics
Table 11. DC Current Characteristics (Sheet 1 of 3)
V
2.7 V–3.6 V 2.7 V–2.85 V
2.7 V–3.6 V 1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Test
Conditions
Sym
Parameter
V
Unit
CCQ
Note
Typ Max
Typ
Max
Typ
Max
VCC
CCMax
VCCQ
=
V
=
ILI
Input Load Current
1,2
± 1
± 1
± 1
µA
VCCQMax
V
IN = VCCQ
or GND
VCC
CCMax
VCCQ
=
V
Output Leakage
Current
=
ILO
1,2
± 10
± 10
± 10
µA
V
CCQMax
VIN = VCCQ
or GND
Datasheet
35
INTEL [ INTEL ]
