£
Intel Advanced+ Boot Block Flash Memory (C3)
Table 11. DC Current Characteristics (Sheet 2 of 3)
V
2.7 V–3.6 V 2.7 V–2.85 V
2.7 V–3.6 V 1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Test
Conditions
Sym
Parameter
V
Unit
CCQ
Note
Typ Max
Typ
Max
Typ
Max
VCC Standby Current
for 0.13 and 0.18
Micron Product
VCC
=
1
7
15
25
20
50
150
250
µA
VCCMax
CE# = RP#
= VCCQ
or during
Program/
Erase
ICCS
VCC Standby Current
for 0.25 Micron
Product
1
10
20
50
150
250
µA Suspend
WP# =
VCCQ or
GND
VCC Power-Down
Current for 0.13 and
0.18 Micron Product
VCC
=
1,2
1,2
7
7
9
15
25
18
7
7
8
20
25
15
7
7
9
20
25
15
µA
µA
mA
V
CCMax
VCCQ
=
V
CCQMax
ICCD
VIN = VCCQ
VCC Power-Down
or GND
RP# = GND
0.2 V
Current for 0.25
Product
VCC Read Current for
0.13 and 0.18 Micron
Product
VCC
CCMax
VCCQ
CCQMax
=
1,2,3
V
=
V
OE# = VIH
CE# =VIL
f = 5 MHz,
,
ICCR
VCC Read Current for
0.25 Micron Product
1,2,3
1
10
18
8
15
9
15
mA
µA
IOUT=0 mA
Inputs = VIL
or VIH
RP# = GND
0.2 V
VPP ≤ VCC
VPP Deep Power-
Down Current
IPPD
0.2
18
5
0.2
18
5
0.2
18
5
VPP =VPP1,
mA Program in
Progress
55
55
55
ICCW
VCC Program Current
1,4
VPP = VPP2
(12v)
Program in
Progress
8
16
8
22
45
15
10
21
16
30
45
45
10
21
16
30
45
45
mA
VPP = VPP1,
mA Erase in
Progress
ICCE
VCC Erase Current
1,4
VPP = VPP2
(12v) ,
Erase in
mA
Progress
VCC Erase Suspend
Current for 0.13 and
0.18 Micron Product
7
15
25
50
50
200
200
50
50
200
200
µA
µA
CE# = VIH,
Erase
Suspend in
Progress
ICCES
/
1,4,5
ICCWS
VCC Erase Suspend
Current for 0.25
Micron Product
10
36
Datasheet
INTEL [ INTEL ]
