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Intel Advanced+ Boot Block Flash Memory (C3)
Table 11. DC Current Characteristics (Sheet 3 of 3)
V
2.7 V–3.6 V 2.7 V–2.85 V
2.7 V–3.6 V 1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Test
Conditions
Sym
Parameter
V
Unit
CCQ
Note
Typ Max
Typ
Max
Typ
Max
2
±15
2
±15
2
±15
µA VPP ≤ VCC
IPPR
VPP Read Current
1,4
50
200
50
200
50
200
µA VPP > VCC
VPP =VPP1,
mA Program in
Progress
0.05
8
0.1
22
0.05
8
0.1
22
0.05
8
0.1
22
IPPW
VPP Program Current
1,4
1,4
VPP = VPP2
(12v)
Program in
Progress
mA
VPP = VPP1,
mA Erase in
Progress
0.05
8
0.1
22
0.05
16
0.1
45
0.05
16
0.1
45
IPPE
VPP Erase Current
VPP = VPP2
(12v) ,
Erase in
mA
Progress
V
PP = VPP1,
Program or
µA Erase
Suspend in
Progress
0.2
50
5
0.2
50
5
0.2
50
5
IPPES
IPPWS Current
/
VCC Erase Suspend
1,4
VPP = VPP2
(12v) ,
Program or
Erase
200
200
200
µA
Suspend in
Progress
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25 °C.
2. The test conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or
CCQ voltage listed at the top of each column. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.
V
3. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS
inputs).
4. Sampled, not 100% tested.
5. ICCES or ICCWS is specified with device de-selected. If device is read while in erase suspend, current draw
is sum of ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS
and ICCR
.
Datasheet
37
INTEL [ INTEL ]
