£
Intel Advanced+ Boot Block Flash Memory (C3)
7.4
DC Voltage Characteristics
Table 12. DC Voltage Characteristics
V
2.7 V–3.6 V
2.7 V–3.6 V
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Sym
Parameter
V
Unit Test Conditions
CCQ
Note
Min
Max
Min
Max
Min
Max
Input Low
Voltage
VCC *
VIL
–0.4
2.0
–0.4
0.4
–0.4
0.4
V
V
0.22 V
Input High
Voltage
VCCQ
+0.3V
VCCQ
0.4V
–
–
VCCQ
+0.3V
VCCQ
0.4V
–
–
VCCQ
+0.3V
VIH
CC = VCCMin
Output Low
Voltage
VOL
–0.1
0.1
-0.1
0.1
-0.1
0.1
V
V
V
CC = VCCMin
Output High
Voltage
VCCQ
–0.1V
VCCQ
0.1V
VCCQ
0.1V
VOH
V
I
CCQ = VCCQMin
OH = –100 µA
VPP Lock-
Complete Write
Protection
VPPLK
VPP1
VPP2
1
1
1.0
3.6
1.0
3.6
1.0
3.6
V
V
Out Voltage
VPP during
Program /
Erase
1.65
11.4
1.65
11.4
1.65
11.4
1,2
12.6
12.6
12.6
V
Operations
VCC Prog/
Erase
Lock
VLKO
1.5
1.2
1.5
1.2
1.5
1.2
V
Voltage
VCCQ Prog/
Erase
Lock
VLKO2
V
Voltage
NOTES:
1. Erase and Program are inhibited when VPP < VPPLK and not guaranteed outside the valid VPP ranges of VPP1 and VPP2
.
2. Applying VPP = 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum.
38
Datasheet
INTEL [ INTEL ]
