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TE28F160C3BA90 参数 Datasheet PDF下载

TE28F160C3BA90图片预览
型号: TE28F160C3BA90
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
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Intel Advanced+ Boot Block Flash Memory (C3)  
6.0  
Power Consumption  
Intel Flash devices have a tiered approach to power savings that can significantly reduce overall  
system power consumption. The Automatic Power Savings (APS) feature reduces power  
consumption when the device is selected but idle. If CE# is deasserted, the flash enters its standby  
mode, where current consumption is even lower. If RP# is deasserted, the flash enter deep power-  
down mode for ultra-low current consumption. The combination of these features can minimize  
memory power consumption, and therefore, overall system power consumption.  
6.1  
6.2  
6.3  
Active Power (Program/Erase/Read)  
With CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer  
to the DC Characteristic tables for I current values. Active power is the largest contributor to  
CC  
overall system power consumption. Minimizing the active current could have a profound effect on  
system power consumption, especially for battery-operated devices.  
Automatic Power Savings (APS)  
Automatic Power Savings provides low-power operation during read mode. After data is read from  
the memory array and the address lines are idle, APS circuitry places the device in a mode where  
typical current is comparable to I  
new location is read.  
. The flash stays in this static state with outputs valid until a  
CCS  
Standby Power  
When CE# is at a logic-high level (V ), the flash memory is in standby mode, which disables  
IH  
much of the device’s circuitry and substantially reduces power consumption. Outputs are placed in  
a high-impedance state independent of the status of the OE# signal. If CE# transitions to a logic-  
high level during Erase or Program operations, the device will continue to perform the operation  
and consume corresponding active power until the operation is completed.  
System engineers should analyze the breakdown of standby time versus active time, and quantify  
the respective power consumption in each mode for their specific application. This approach will  
provide a more accurate measure of application-specific power and energy requirements.  
6.4  
Deep Power-Down Mode  
The deep power-down mode is activated when RP# = V . During read modes, RP# going low de-  
IL  
selects the memory and places the outputs in a high-impedance state. Recovery from deep power-  
down requires a minimum time of t  
operations.  
for Read operations, and t  
/t  
for Write  
PHQV  
PHWL PHEL  
32  
Datasheet  
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